Casa : Productos : Memory : DDR Memory : Samsung
Samsung - DDR2 - module - 4 GB - FB-DIMM 240-pin - 667 MHz / PC2-5300 - CL5 - 1.8 V - Fully Buffered - ECC - Refurb
Información
FabricanteSamsung
Referencia
M395T5160QZ4-CE65-REF
- 240 pin fully buffered dual in-line memory module (FBDIMM)
- 3.2 Gb/s, 4.0 Gb/s link transfer rate
- Buffer interface with high-speed differential point-to-point link at 1.5 Volt
- Channel error detection and reporting
- Channel Failover mode support
- Serial presence detect with EEPROM
- 8 banks
- Posted CAS
- Programmable CAS latency - 3, 4, 5, 6
- Programmable additive latency - 0, 1, 2, 3, 4, 5
- Automatic DDR2 DRAM bus and channel calibration
- MBIST and IBIST Test functions
- Hot add-on and Hot Remove capability
- Transparent mode for DRAM test support